Photoluminescence study of SiGe quantum well broadening by rapid thermal annealing

被引：4
|
作者：
Lafontaine, H [1 ]
Houghton, DC [1 ]
Rowell, N [1 ]
Aers, GC [1 ]
Rinfret, R [1 ]
机构：
[1] NATL RES COUNCIL CANADA, INST NATL MEASUREMENT STAND, OTTAWA, ON K1A 0R6, CANADA
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 157卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(95)00363-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Photoluminescence was used to measure the broadening of thin (t = 12-77 Angstrom) SiGe quantum wells (QW) under typical RTA conditions. An anneal time of 300 s and temperatures ranging from 800 to 1000 degrees C were used. ''No phonon'' SiGe transition energy shifts of up to 65 meV are measured. Results are analyzed taking into account the initial diffusion during growth, the increase in QW bandgap due to intermixing and the decrease in quantum confinement. Interdiffusivity values showing an Arrhenius behavior and an activation energy of 2.7 eV are obtained.
引用
收藏
页码：57 / 60
页数：4
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