STRESS AND MICROSTRUCTURE RELATIONSHIPS IN GOLD THIN-FILMS

This work compares the mechanical properties of 0.4-2 μm gold polycrystalline thin films deposited on silicon wafers by electroplating, evaporation or sputtering. As-deposited films were observed to be under tensile stress of the order of 20-70 MPa for the electroplated films, 100-280 MPa for the evaporated ones and 120-240 MPa for the sputtered ones. The stress behaviour after annealing up to a temperature of 250°C was investigated. The intrinsic stress is discussed in relation to the microstructure of the deposits. Lower stress values can be obtained with electrodeposits but their stress stability vs temperature is also lower. © 1990.