HOT-ELECTRON SPECTROSCOPY

被引：40

作者：

HAYES, JR ^{[1
]}

LEVI, AFJ ^{[1
]}

WIEGMANN, W ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1049/el:19840578

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：851 / 852

页数：2

共 50 条

[41] THE GAAS HOT-ELECTRON TRANSISTOR
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C428 - C428
[42] HOT-ELECTRON TRANSPORT IN THE PLANE
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[J]. SURFACE SCIENCE, 1990, 229 (1-3) : 155 - 157
[43] HOT-ELECTRON MOBILITY IN INSB
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[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) : 1888 - 1889
[44] INFRARED HOT-ELECTRON PHOTOTRANSISTOR
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 78 - 82
[45] HOT-ELECTRON DIFFUSIVITY IN SILICON
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[J]. SOLID STATE COMMUNICATIONS, 1977, 22 (09) : 569 - 571
[46] HOT-ELECTRON INJECTION DEVICES
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[J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (05) : 389 - 400
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[48] UNIPOLAR HOT-ELECTRON TRANSISTORS
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[J]. PHYSICA SCRIPTA, 1988, T23 : 227 - 231
[49] MICROINSTABILITIES IN HOT-ELECTRON PLASMAS
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[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (11): : 1493 - &
[50] TRANSVERSE HOT-ELECTRON FOCUSING
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[J]. PHYSICAL REVIEW B, 1993, 48 (19): : 14679 - 14682