Resonant second harmonic generation in semiconductor quantum wells

被引：2
|
作者：
Ito, H [1 ]
Minami, F [1 ]
Yoshida, K [1 ]
Inoue, K [1 ]
机构：
[1] HOKKAIDO UNIV,RES INST ELECTR SCI,SAPPORO,HOKKAIDO 060,JAPAN
来源：
JOURNAL OF LUMINESCENCE | 1995年 / 66-7卷 / 1-6期
关键词：
D O I：
10.1016/0022-2313(95)00197-2
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We have investigated the electronic structure of GaAs/AlGaAs and GaAs/AlAs quantum wells by the resonance effects of second-harmonic generation. From the energy split between the 1S and 2P exciton levels, the exciton binding energies are determined. As a result of the exciton confinement effect, a significant increase of the binding energy is found, as compared to bulk GaAs.
引用
收藏
页码：493 / 495
页数：3
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