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- [7] Phase and structural changes stimulated in multilayer contacts to n-GaAs by rapid thermal annealing [J]. Semiconductors, 2003, 37 : 1114 - 1118
- [9] INFRARED RAPID THERMAL ANNEALING FOR GAAS DEVICE FABRICATION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 4998 - 5003
- [10] ON THE ORIGIN OF THE NEW ELECTRON TRAPS INDUCED BY RAPID THERMAL ANNEALING IN GAAS USING CAPPING PROXIMITY TECHNIQUE [J]. ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 27 - 32