INFLUENCE OF NEUTRON-IRRADIATION AND ANNEALING ON THE PROPERTIES OF GERMANIUM-DOPED SILICON

被引：0
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作者：
ITALYANTSEV, AG
KURBAKOV, AI
MORDKOVICH, VN
RUBINOVA, EE
TEMPER, EM
TRUNOV, VA
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 05期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：526 / 529
页数：4
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