PIEZORESISTANCE OF UNIAXIALLY DEFORMED N-TYPE GALLIUM-PHOSPHIDE

被引:0
|
作者
BARANSKII, PI [1 ]
BELYAEV, AE [1 ]
GORODNICHII, OP [1 ]
机构
[1] ACAD SCI UKSSR,SEMICOND INST,KIEV,UKSSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 01期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:110 / 112
页数:3
相关论文
共 50 条
  • [31] PIEZORESISTANCE IN N-TYPE INP
    SAGAR, A
    [J]. PHYSICAL REVIEW, 1960, 117 (01): : 101 - 101
  • [32] PIEZORESISTANCE IN N-TYPE GAAS
    SAGAR, A
    [J]. PHYSICAL REVIEW LETTERS, 1958, 1 (11) : 425 - 425
  • [33] HALL-EFFECT MEASUREMENTS OF N-TYPE GALLIUM PHOSPHIDE
    MONTGOME.HC
    FELDMANN, WL
    [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3228 - &
  • [34] MAGNETOOPTICAL TRANSITIONS IN GALLIUM-PHOSPHIDE
    BELOV, NP
    KRYLOV, KI
    PROKOPENKO, VT
    YASKOV, AD
    [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1987, 30 (07): : 66 - 70
  • [35] INDUCED BIREFRINGENCE IN GALLIUM-PHOSPHIDE
    GLURDZHI.LN
    IZERGIN, AP
    KOPYLOVA, ZN
    REMENYUK, AD
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (02): : 305 - 306
  • [36] OPTOELECTRONIC BISTABILITY IN GALLIUM-PHOSPHIDE
    CHOI, MS
    HUR, JH
    GUNDERSEN, MA
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (19) : 1563 - 1565
  • [37] SUPERCONDUCTIVITY OF METALLIC GALLIUM-PHOSPHIDE
    TIMOFEEV, YA
    VINOGRADOV, BV
    YAKOVLEV, EN
    [J]. FIZIKA NIZKIKH TEMPERATUR, 1981, 7 (11): : 1479 - 1481
  • [38] NERNST-ETTINGSHAUSEN TENSOR OF UNIAXIALLY DEFORMED N-TYPE SILICON AND N-TYPE GERMANIUM .2.
    BUDA, IS
    BARANSKII, PI
    BORENKO, VS
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (10): : 1091 - 1093
  • [39] THE COL SPECTRUM IN GALLIUM-PHOSPHIDE
    DEAN, PJ
    MONEMAR, B
    GISLASON, HP
    HERBERT, DC
    [J]. JOURNAL OF LUMINESCENCE, 1981, 24-5 (NOV) : 401 - 404
  • [40] PHOTOCONDUCTIVITY OF COMPENSATED GALLIUM-PHOSPHIDE
    IVASHCHENKO, AI
    SAMORUKOV, BE
    SLOBODCHIKOV, SV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (10): : 1269 - 1273