ANTIMONY DOPING OF SI LAYERS GROWN BY SOLID-PHASE EPITAXY

被引：10
|
作者：
LAU, SS
CANALI, C
LIAU, ZL
NAKAMURA, K
NICOLET, MA
MAYER, JW
BLATTNER, RJ
EVANS, CA
机构：
[1] CALTECH,PASADENA,CA 91125
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 03期
关键词：
D O I：
10.1063/1.88670
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：148 / 150
页数：3
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