Structure of iron silicide film on Si(111) grown by solid-phase epitaxy and reactive deposition epitaxy

被引：10

作者：

Matsumoto, M ^{[1
]}

Sugie, K ^{[1
]}

Kawauchi, T ^{[1
]}

Fukutani, K ^{[1
]}

Okano, T ^{[1
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 3B期

关键词：

iron silicide; film growth; scanning tunneling microscopy (STM); low-energy electron diffraction (LEED);

D O I：

10.1143/JJAP.45.2390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The method dependence of iron silicide grown on Si(I 11) was studied by scanning tunneling microscopy. The iron silicide films grown by two different methods (solid-phase epitaxy and reactive deposition epitaxy) were compared at a small-film-thickness region below I nm. The Surface morphology strongly depends on the growth method, which suggests that the strain in the interface region is affected by the growth method.

引用

页码：2390 / 2394

页数：5

共 50 条

[1] Phase formation in iron silicide nanodots grown by reactive deposition epitaxy on Si(111)
Gonzalez, J. C.
Miquita, D. R.
da Silva, M. I. N.
Magalhaes-Paniago, R.
Moreira, M. V. B.
de Oliveira, A. G.
[J]. PHYSICAL REVIEW B, 2010, 81 (11):
[2] Formation of ytterbium silicide film on Si(001) by solid-phase epitaxy
Kuzmin, M
Perälä, RE
Vaara, RL
Laukkanen, P
Väyrynen, I
[J]. JOURNAL OF CRYSTAL GROWTH, 2004, 262 (1-4) : 231 - 239
[3] SOLID-PHASE EPITAXY OF GE ON (111) SI
KRIUGER, DB
MIKHAILOV, IF
PALATNIK, LS
FEDORENKO, AI
[J]. DOKLADY AKADEMII NAUK SSSR, 1978, 243 (06): : 1448 - 1450
[4] Structural Properties of Iron Silicide Nanostructures Grown by Reactive Deposition Epitaxy
Hsu, Hung Feng
Wu, Hwang Yuan
Huang, Yu Ting
Chen, Ting Hsuan
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (08)
[5] Reactive deposition epitaxy growth of iron silicide nanoparticles on Si(001)
Molnar, G.
Dozsa, L.
Vertesy, Z.
Koos, A. A.
Vouroutzis, N.
Dimitriadis, C. A.
Paraskevopoulos, K. M.
[J]. EMRS-C: MATERIALS DEVICES AND ECONOMICS ISSUES FOR TOMORROW'S PHOTOVOLTAICS, 2011, 3
[6] Study of ultrathin iron silicide films grown by solid phase epitaxy on the Si(001) surface
Balashev, V. V.
Korobtsov, V. V.
Pisarenko, T. A.
Chusovitin, E. A.
Galkin, K. N.
[J]. PHYSICS OF THE SOLID STATE, 2010, 52 (02) : 397 - 403
[7] Study of ultrathin iron silicide films grown by solid phase epitaxy on the Si(001) surface
V. V. Balashev
V. V. Korobtsov
T. A. Pisarenko
E. A. Chusovitin
K. N. Galkin
[J]. Physics of the Solid State, 2010, 52 : 397 - 403
[8] Iron silicides grown by solid phase epitaxy on a Si(111) surface: Schematic phase diagram
Kataoka, K.
Hattori, K.
Miyatake, Y.
Daimon, H.
[J]. PHYSICAL REVIEW B, 2006, 74 (15)
[9] Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001)
Molnar, Gyoergy
[J]. JOURNAL OF MATERIALS RESEARCH, 2013, 28 (13) : 1724 - 1728
[10] Initial growth mode of Er silicide on Si(111) by solid phase epitaxy
Roge, TP
Palmino, F
Savall, C
Labrune, JC
Saintenoy, S
Wetzel, P
Pirri, C
Bolmont, D
Gewinner, G
[J]. SURFACE SCIENCE, 1996, 352 : 622 - 627

← 1 2 3 4 5 →