INFLUENCE OF SPECULARLY REFLECTING BOUNDARIES ON RADIATION TRAPPING IN A PLANE-PARALLEL SLAB

被引:1
|
作者
MOLISCH, AF
OEHRY, BP
SCHUPITA, W
SUMETSBERGER, B
MAGERL, G
机构
[1] Institut für Nachrichtentechnik und Hochfrequenztechnik, Technische Universität Wien, A-1040 Vienna
来源
PHYSICAL REVIEW A | 1994年 / 50卷 / 02期
关键词
D O I
10.1103/PhysRevA.50.1581
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We consider radiation trapping in a plane-parallel slab with specularly reflecting boundaries. The reflection coefficient of the walls can be different at the two sides of the slab, and may depend on the angle and frequency of the radiation. We derive a closed-form Green's function, and give an efficient method for its evaluation. We show that, in most cases, higher-order modes have practically no influence on the temporal behavior of the emergent radiation when the reflection coefficients at both walls are high, but that they are important when only one wall is highly reflecting. We also investigate the difference between diffuse and specular reflection. For center-of-line opacities k0L exceeding 0.5, the difference in the lowest-order trapping factor is quite small (less than 3% for Doppler line shapes and less than 6% for Lorentzian shapes). Trapping calculations can therefore be simplified by using the formulas for specular instead of diffuse reflection.
引用
收藏
页码:1581 / 1585
页数:5
相关论文
共 50 条
  • [21] Thermal radiation characteristics of plane-parallel SiC wafer
    Han, MH
    Liang, XG
    Huang, Y
    CHINESE SCIENCE BULLETIN, 2005, 50 (04): : 295 - 298
  • [22] ANISOTROPIC RADIATION TRANSFER IN A PLANE MEDIUM WITH SPECULARLY-REFLECTING BOUNDARY-CONDITIONS
    ATTIA, MT
    MADKOUR, MA
    ABULWAFA, EM
    ABDELNABY, MM
    JOURNAL OF QUANTITATIVE SPECTROSCOPY & RADIATIVE TRANSFER, 1992, 47 (03): : 221 - 227
  • [23] Features of thermal radiation of plane-parallel semiconductor wafers
    K. Yu. Guga
    A. G. Kollyukh
    A. I. Liptuga
    V. A. Morozhenko
    V. I. Pipa
    Semiconductors, 2004, 38 : 507 - 511
  • [24] A prototype for a plane-parallel ionization chamber for β radiation detection
    Bercea, S.
    Radulescu, L.
    Celarel, A.
    Cenusa, C.
    Miron, C.
    Scarlat, F.
    Scarisoreanu, A.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2011, 5 (3-4): : 305 - 308
  • [25] Features of thermal radiation of plane-parallel semiconductor wafers
    Guga, KY
    Kollyukh, AG
    Liptuga, AI
    Morozhenko, VA
    Pipa, VI
    SEMICONDUCTORS, 2004, 38 (05) : 507 - 511
  • [27] On Plane-Parallel Separated Flows of an Incompressible Fluid near Flat Boundaries
    Yu. D. Shmyglevskii
    A.V. Shcheprov
    Fluid Dynamics, 2002, 37 : 674 - 683
  • [28] On Plane-Parallel Separated Flows of an Incompressible Fluid near Flat Boundaries
    Shmyglevskii, Yu. D.
    Shcheprov, A. V.
    FLUID DYNAMICS, 2002, 37 (05) : 674 - 683
  • [29] A nonselective thermal primary measurement converter of laser radiation with a plane specularly reflecting energy collector
    V. V. Bliznyuk
    A. A. Tinaev
    Measurement Techniques, 2010, 53 : 178 - 183
  • [30] A NONSELECTIVE THERMAL PRIMARY MEASUREMENT CONVERTER OF LASER RADIATION WITH A PLANE SPECULARLY REFLECTING ENERGY COLLECTOR
    Bliznyuk, V. V.
    Tinaev, A. A.
    MEASUREMENT TECHNIQUES, 2010, 53 (02) : 178 - 183