共 50 条
- [31] OBSERVATION OF SHALLOW RESIDUAL DONORS IN HIGH-PURITY EPITAXIAL GAAS BY MEANS OF PHOTO-LUMINESCENCE SPECTROSCOPYSOLID STATE COMMUNICATIONS, 1981, 38 (11) : 1053 - 1056ALMASSY, RJREYNOLDS, DCLITTON, CWBAJAJ, KKMCCOY, GL
- [32] THE PHOTO-LUMINESCENCE ASSOCIATED WITH TRIGONAL CR IN GAAS - A DISCUSSION OF 2 RECENTLY PROPOSED MODELSJOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (30): : 6257 - 6269EAVES, LUIHLEIN, C
- [33] PHOTO-LUMINESCENCE IN HEAVILY DOPED GAAS .2. HYDROSTATIC-PRESSURE DEPENDENCEPHYSICAL REVIEW B, 1980, 22 (02): : 894 - 903OLEGO, DCARDONA, MMULLER, H
- [34] Photo-induced current spectroscopy study on semi-insulating LEC GaAsJOURNAL OF PHYSICS D-APPLIED PHYSICS, 1996, 29 (04) : 1071 - 1073Seghier, D
- [35] A PHOTO-LUMINESCENCE STUDY OF BERYLLIUM-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXYJOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6888 - 6894SCOTT, GBDUGGAN, GDAWSON, PWEIMANN, G
- [36] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPYJOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066LANG, DVLOGAN, RA
- [37] TIME-RESOLVED PHOTO-LUMINESCENCE SPECTROSCOPY IN AMORPHOUS AS2S3PHYSICAL REVIEW LETTERS, 1979, 42 (02) : 118 - 121BOSCH, MASHAH, J
- [38] TEMPERATURE-DEPENDENCE OF OPTICAL-PROPERTIES OF DEEP IMPURITY LEVELS IN SEMICONDUCTORS STUDIED BY PHOTO-LUMINESCENCEJOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) : 871 - 874MONEMAR, BSAMUELSON, LLAGERSTEDT, OGISLASON, HPHOLTZ, PO
- [39] Nonradiative investigations of photoquenching and recovery of El2 defect levels in SI-GaAsICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1031 - 1035Fukuyama, AIkari, TAkashi, YFutagami, K