ANALYSIS OF AN RF PROXIMITY SWITCH OF 2-TERMINAL TYPE

被引：0
|
作者：
UEMURA, M [1 ]
机构：
[1] OMRON TATEISI ELECTR CO,KYOTO,JAPAN
来源：
INTERNATIONALE ELEKTRONISCHE RUNDSCHAU | 1974年 / 28卷 / 05期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：95 / 99
页数：5
相关论文
共 50 条
  • [31] CHARACTERISTICS OF ACTIVE 2-TERMINAL OPTRON NETWORKS
    BARTENEV, LS
    GUSEV, VM
    SHTERNOV, AA
    TELECOMMUNICATIONS AND RADIO ENGINEERING, 1974, 28 (12) : 121 - 124
  • [32] LOWER BOUNDS ON 2-TERMINAL NETWORK RELIABILITY
    BRECHT, TB
    COLBOURN, CJ
    DISCRETE APPLIED MATHEMATICS, 1988, 21 (03) : 185 - 198
  • [33] A NEW 2-TERMINAL HIGHVOLTAGE RECTIFIER TUBE
    BAKER, GW
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1948, 36 (03): : 378 - 378
  • [34] A HIGH FIELD EFFECT 2-TERMINAL OSCILLATOR
    LADE, RW
    SCHLAX, TR
    PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (05): : 940 - 941
  • [35] The etale fundamental groupoid as a 2-terminal costack
    Pirashvili, Ilia
    KYOTO JOURNAL OF MATHEMATICS, 2020, 60 (01) : 379 - 403
  • [36] BOUNDING ALGORITHMS FOR 2-TERMINAL NETWORK RELIABILITY
    THANGAMANI, G
    MICROELECTRONICS AND RELIABILITY, 1994, 34 (06): : 969 - 981
  • [37] A Novel 2-Terminal Zener Voltage Reference
    Kok, Chiang-Liang
    Siek, Liter
    2011 IEEE 54TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2011,
  • [38] DIGITAL-CONTROL OF A 2-TERMINAL RESISTANCE
    MURTI, VGK
    ELECTRONICS LETTERS, 1983, 19 (14) : 514 - 515
  • [39] 2-TERMINAL RESISTANCE OF QUANTUM HALL DEVICES
    RIKKEN, GLJA
    VANHAAREN, JAMM
    VANDERWEL, W
    VANGELDER, AP
    VANKEMPEN, H
    WYDER, P
    ANDRE, JP
    PLOOG, K
    WEIMANN, G
    PHYSICAL REVIEW B, 1988, 37 (11): : 6181 - 6186
  • [40] HEAT SINK ANALYSIS FOR 2-TERMINAL CYLINDRICAL MICROWAVE-OSCILLATOR DEVICES
    BATCHELOR, AR
    MICROELECTRONICS JOURNAL, 1994, 25 (01) : 33 - 40
12345