APPLICATION OF DIAMOND-LIKE CARBON-FILMS ON CRYSTALLINE SILICON TO HETEROJUNCTION PHOTODIODES

被引：0
|
作者：
MANDEL, T
FRISCHHOLZ, M
HELBIG, R
HAMMERSCHMIDT, A
机构：
[1] UNIV ERLANGEN NURNBERG,INST PHYS APPL,D-91058 ERLANGEN,GERMANY
[2] SIEMENS AG,CORP RES & DEV,D-91052 ERLANGEN,GERMANY
来源：
DIAMOND FILMS AND TECHNOLOGY | 1995年 / 5卷 / 05期
关键词：
DIAMOND-LIKE CARBON; POSTDEPOSITION TREATMENT; HETEROJUNCTION PHOTODIODE; QUANTUM EFFICIENCY;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied the properties of a heterojunction photodiode fabricated from diamondlike carbon films (DLC) on p-type crystalline silicon (c-Si). DLC films were prepared by a capacitively coupled radio-frequency plasma-enhanced chemical vapor deposition technique using methane as process gas. After deposition, the samples were annealed at 250 degrees C in a high-pressure hydrogen atmosphere (300 bar) for several hours in order to reduce the interface trap density. The quantum efficiency of the heterostructure DLC/p-type c-Si (10-20 Omega cm) was substantially improved by the postdeposition treatment in a high-pressure hydrogen atmosphere. After this treatment the quantum efficiency exceeded unity indicating a charge-carrier multiplication.
引用
收藏
页码：255 / 260
页数：6
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