PROPERTIES OF CVD WSIX FILMS AND CVD WSIX/GAAS SCHOTTKY-BARRIER

被引：0

|

作者：

HARA, T

SUGA, A

ICHIKAWA, R

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 113卷 / 02期

关键词：

D O I：

10.1002/pssa.2211130225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：459 / 466

页数：8

相关论文

共 50 条

[21] GAAS SCHOTTKY-BARRIER DEVICES AND COMPONENTS
CALVIELLO, JA
MICROWAVE JOURNAL, 1979, 22 (09) : 92 - &
[22] CHEMISTRY OF SCHOTTKY-BARRIER FORMATION ON GAAS
WALDROP, JR
GRANT, RW
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) : 731 - 731
[23] THE SCHOTTKY-BARRIER OF SN ON GAAS(110)
MATTERNKLOSSON, M
LUTH, H
SURFACE SCIENCE, 1985, 162 (1-3) : 610 - 616
[24] Interface roughening and effect of tensile WSix laer on srain rlaxation of eitaxial SiGe lyer in CVD-Wsix/Si0.83Ge0.17/Si(001)
Shin, DO
Lee, NE
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 47 : S471 - S476
[25] GAAS SCHOTTKY-BARRIER AVALANCHE DIODES
KIM, CK
ARMSTRON.LD
SOLID-STATE ELECTRONICS, 1970, 13 (01) : 53 - &
[26] SCHOTTKY-BARRIER BEHAVIOR IN POLYCRYSTAL GAAS
COHEN, MJ
PAUL, MD
MILLER, DL
WALDROP, JR
HARRIS, JS
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 899 - 903
[27] THE SURFACE AND SCHOTTKY-BARRIER IN GAAS AND INP
PALAU, JM
ISMAIL, A
LASSABATERE, L
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1985, 40 (226): : 137 - 147
[28] GAAS SCHOTTKY-BARRIER DEVICES AND COMPONENTS
CALVIELLO, JA
MICROWAVE JOURNAL, 1979, 22 (08) : 53 - &
[29] MAGNETOOPTIC AND SCHOTTKY-BARRIER PROPERTIES OF MNAL/ALAS/GAAS HETEROSTRUCTURES
CHEEKS, TL
NAHORY, RE
SANDS, T
HARBISON, JP
BRASIL, MJSP
GILCHRIST, HL
SCHWARZ, SA
PUDENSI, MAA
ALLEN, SJ
FLOREZ, LT
KERAMIDAS, VG
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 101 - 106
[30] The properties of Ag-n-GaAs Schottky-barrier contacts
Kostenko, V.L.
Dmitrieva, L.B.
Mikroelektronika, 26 (04): : 301 - 304

← 1 2 3 4 5 →