MMICS SAVE SPACE, INCREASE RELIABILITY, AND IMPROVE PERFORMANCE

被引：0
|
作者：
LYMAN, J
机构：
[1] Electronics Week, New York, NY, USA, Electronics Week, New York, NY, USA
来源：
ELECTRONICSWEEK | 1985年 / 58卷 / 20期
关键词：
SEMICONDUCTING GALLIUM ARSENIDE - TRANSISTORS; FIELD EFFECT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analog monolithic-microwave-IC (MMIC) technology based mainly on gallium arsenide is reviewed. Gallium arsenide is an ideal semiconductor for MMICs because of its high electron mobility and its insulating properties. The high electron mobility permits the fabrication of high-speed devices, and the semi-insulating properties permit the substrate to act as the dielectric medium onto which passive matching circuitry is fabricated. The key element, the metal semiconductor (MES) is introduced and the characteristics of MESFET device are given. The present work in R&D laboratories and packaging methods is also indicated.
引用
收藏
页码：52 / 57
页数：6
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