EFFECTS OF ACOUSTIC-PHONON AND OPTICAL-PHONON SIDEBANDS ON THE FUNDAMENTAL OPTICAL-ABSORPTION EDGE IN CRYSTALS AND DISORDERED SEMICONDUCTORS

We present the results of a parameter-free first-principles theory for the fine structure of the Urbach optical-absorption edge in crystalline and disordered semiconductors. The dominant features are recaptured by means of a simple physical argument based on the most probable potential-well analogy. At finite temperatures, the overall linear exponential Urbach behavior of the subgap optical-absorption coefficient is a consequence of multiple LA-phonon emission and absorption sidebands that accompany the electronic transition. The fine structure of subgap absorption spectra observed in some materials is accounted for by multiple TO-, LO-, and TA-phonon absorption and emission sidebands. Good agreement is found with experimental data on crystalline silicon. The effects of nonadiabaticity in the electron-phonon interaction are calculated. © 1990 The American Physical Society.