ELECTRONIC-STRUCTURE OF THE PROTOTYPICAL AS-SI(111)-1X1 SURFACE INVESTIGATED BY INVERSE-PHOTOEMISSION SPECTROSCOPY

被引:9
|
作者
BOUZIDI, S [1 ]
ANGOT, T [1 ]
COLETTI, F [1 ]
DEBEVER, JM [1 ]
GUYAUX, JL [1 ]
THIRY, PA [1 ]
机构
[1] FAC UNIV NOTRE DAME PAIX,INST STUDIES INTERFACE SCI,INTERDISCIPLINAIRE SPECT ELECTR LAB,B-5000 NAMUR,BELGIUM
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 23期
关键词
D O I
10.1103/PhysRevB.49.16539
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Angle-resolved inverse-photoemission spectra have been measured on the nonreconstructed As:Si(111)-1 X 1 surface along the two main directions GAMMAKBAR and GAMMAMBAR of the surface Brillouin zone. We observed three empty bands, the lower one of which is characteristic of a surface state partly resonant with bulk states in good agreement with theoretical calculations. We also observed a marked asymmetry in the dispersion along the M'GAMMAMBAR direction.
引用
收藏
页码:16539 / 16543
页数:5
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