EXCESS ELECTRON AND EXCESS HOLE DRIFT MOBILITIES IN TETRACENE AND PENTACENE

被引:0
|
作者
KUMAR, B
AGARWAL, B
机构
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Excess electron and excess hole drift mobilities of tetracene and pentacene have been with tight binding approximation using two-parameter omega-technique MO's as a basis function for constructing Bloch function and a modified molecular potential. The applicability of band theory has been discussed in the light of existing theories. It is suggested that these organic solids may be candidate materials, for organic photovoltaic devices.
引用
收藏
页码:174 / 180
页数:7
相关论文
共 50 条
  • [41] ON EXCESS ELECTRON AND HOLE BAND STRUCTURES AND CARRIER MOBILITY IN NAPHTHALENE ANTHRACENE, AND SEVERAL POLYPHENYLS
    KATZ, JI
    JORTNER, J
    CHOI, S
    RICE, SA
    JOURNAL OF CHEMICAL PHYSICS, 1963, 39 (07): : 1683 - &
  • [42] Explaining different experimental hole mobilities: influence of polymorphism on dynamic disorder in pentacene
    Landi, Alessandro
    Troisi, Alessandro
    Peluso, Andrea
    JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (31) : 9665 - 9670
  • [43] EXCESS AND HOLE 4N-NUCLEI
    BENISZ, J
    ACTA PHYSICA POLONICA B, 1986, 17 (08): : 735 - 741
  • [44] PROPERTIES OF THE EXCESS ELECTRON IN HYDRATED ELECTRON CLUSTERS
    CAMPAGNOLA, PJ
    POSEY, LA
    DELUCA, MJ
    JOHNSON, MA
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1989, 198 : 88 - PHYS
  • [45] Electron and hole mobilities in orthorhombically strained silicon
    Chang, Shu-Tong
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3070 - 3073
  • [46] Electron and hole mobilities in semimetallic bismuth nanowires
    Lee, Kiyoung
    Lee, Seunghyun
    Holmes, S. N.
    Ham, Jinhee
    Lee, Wooyoung
    Barnes, C. H. W.
    PHYSICAL REVIEW B, 2010, 82 (24)
  • [47] ELECTRON AND HOLE MOBILITIES IN LIGHTLY DOPED SILICON
    MISIAKOS, K
    TSAMAKIS, D
    APPLIED PHYSICS LETTERS, 1994, 64 (15) : 2007 - 2009
  • [48] Demonstration of determination of electron and hole drift-mobilities in organic thin films by means of impedance spectroscopy measurements
    Ishihara, Shingo
    Hase, Hiroyuki
    Okachi, Takayuki
    Naito, Hiroyoshi
    THIN SOLID FILMS, 2014, 554 : 213 - 217
  • [49] Ambipolar pentacene/C60-based field-effect transistors with high hole and electron mobilities in ambient atmosphere
    Yan, Hu
    Kagata, Tsubasa
    Okuzaki, Hidenori
    APPLIED PHYSICS LETTERS, 2009, 94 (02)
  • [50] Excess Electron States and Mobility in Polyethylene
    Wang, Yang
    Wu, Kai
    Cubero, David
    PROCEEDINGS OF 2014 INTERNATIONAL SYMPOSIUM ON ELECTRICAL INSULATING MATERIALS (ISEIM 2014), 2014, : 393 - 396