ELECTRICAL TRANSPORT-PROPERTIES OF ZRSI2 THIN-FILMS

Polycrystalline ZrSi2 thin films were prepared by a solid state reaction of zirconium layers with silicon at different annealing conditions. Resistivity and Hall effect measurements were performed as a function of temperature from 4.2 up to 800 K. The results show that zirconium disilicide exhibits a metallic behaviour, with a room-temperature intrinsic resistivity of about 25-mu-OMEGA cm. The Hall coefficient is negative, giving at room temperature an apparent electron concentration of 8.7 x 10(21) cm-3 and a Hall mobility of 13.5 cm2 V-1 s-1.