THE QUEST FOR THE QUANTUM DOT

被引:1
|
作者
DETTMER, R
机构
[1] IEE Review, United Kingdom
来源
IEE REVIEW | 1988年 / 34卷 / 10期
关键词
Electromagnetic waves - Electrons - Lasers; Semiconductor - Semiconducting gallium arsenide - Waveguides;
D O I
10.1049/ir:19880157
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Semiconductor devices that confine electrons within two-dimensional quantum wells are already in production. The zero-dimensional quantum dot promises super-efficient lasers with the ultimate in spectral purity. The theory of quantum wells, quantum wires and quantum dots is explained. Energy quantisation in quantum wells is exploited in the quantum well laser, where the quantum well is formed by a 5-10 nm layer of GaAs sandwiched between two layers of AlGaAs. The quantum wires produced at Glasgow are between 0.1 μm and 0.5 μm wide, and the depth of the etch is around 30 nm. The quantum dot would have zero degrees of freedom. Fabricating quantum dots has proved to be extremely difficult. The dots have to be very small, ideally less than 30 nm in diameter, so the demands on lithography and etching are extreme.
引用
收藏
页码:395 / 397
页数:3
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