ELECTRON-IRRADIATION ASSISTED ANNEALING OF BORON AND PHOSPHORUS IMPLANTED SILICON LAYERS

被引：6
|
作者：
SUSKI, J
CSEPREGI, L
GYULAI, J
RZEWUSKI, H
WERNER, Z
机构：
[1] INST NUCL RES,SWIERK,POLAND
[2] CENT RES INST PHYS,BUDAPEST,HUNGARY
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1976年 / 29卷 / 03期
关键词：
D O I：
10.1080/00337577608233501
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：137 / 141
页数：5
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