CHANGE IN CAPACITANCE OF INP MIS DIODES CAUSED BY THE PIEZOELECTRIC EFFECT

被引：0
|
作者：
KUSAKA, M
HIRAI, M
OKAZAKI, S
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 80卷 / 01期
关键词：
D O I：
10.1002/pssa.2210800151
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K25 / K28
页数：4
相关论文
共 50 条
  • [21] TRANSIENT CHARGING OF MIS DIODES PREPARED BY AL OVERLAYER INDUCED PLASMA OXIDATION OF INP
    THURZO, I
    PINCIK, E
    HARMATHA, L
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (03) : 418 - 422
  • [22] PIEZOELECTRIC EFFECT IN GAAS MOS DIODES
    KUSAKA, M
    HIRAI, M
    OKAZAKI, S
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 60 (02): : K133 - K136
  • [23] InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes
    Pitanti, A.
    Ercolani, D.
    Sorba, L.
    Roddaro, S.
    Beltram, F.
    Nasi, L.
    Salviati, G.
    Tredicucci, A.
    PHYSICAL REVIEW X, 2011, 1 (01): : 1 - 7
  • [24] MEASUREMENT OF THE PARAMETERS OF MIS STRUCTURES WITH COMPENSATION OF THE EFFECT OF THE CAPACITANCE OF THE DIELECTRIC
    CHAIKOVSKII, VM
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1987, 30 (03) : 709 - 712
  • [25] Electrical characteristics of (n)-InP MIS diodes with a POxNy interfacial layer deposited at low temperature
    Hbib, H
    Bonnaud, O
    Fortin, B
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (05) : 609 - 613
  • [26] Effect of InSb buffer layer in MIS structures based on InP
    Tizi, S
    Benamara, Z
    Chellali, M
    Talbi, A
    Gruzza, B
    Merle, S
    Robert, C
    VACUUM, 2001, 62 (04) : 315 - 320
  • [27] CONSTANT CAPACITANCE TECHNIQUE TO STUDY ELECTRICAL INSTABILITIES IN INP MIS PROVIDED BY PECVD SILICON-NITRIDE
    KIM, CH
    KWON, SD
    CHOE, BD
    HAN, IK
    LEE, JI
    KANG, KN
    PARK, HL
    LIM, H
    APPLIED SURFACE SCIENCE, 1993, 65-6 (1-4) : 858 - 862
  • [28] Effect of spacer layers on capacitance of resonant tunneling diodes
    1600, American Inst of Physics, Woodbury, NY, USA (76):
  • [29] Effect of doping density on capacitance of resonant tunneling diodes
    Jo, J
    Alt, K
    Wang, KL
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) : 5206 - 5209
  • [30] TRANSIENT PHENOMENA CAUSED BY TEMPERATURE CHANGE ON CAPACITANCE OF RUTILE FILM
    YAMAZAKI, M
    NOZAKI, H
    JOURNAL OF PHYSICAL CHEMISTRY, 1971, 75 (09): : 1279 - &
12345