HIGH-PERFORMANCE POLARIZATION-INSENSITIVE ELECTROABSORPTION MODULATOR BASED ON STRAINED GAINAS-ALINAS MULTIPLE-QUANTUM WELLS

被引：17

作者：

CHELLES, S ^{[1
]}

FERREIRA, R ^{[1
]}

VOISIN, P ^{[1
]}

HARMAND, JC ^{[1
]}

机构：

[1] FRANCE TELECOM, CNET, PAB, BAG, F-92225 BAGNEUX, FRANCE

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 02期

关键词：

D O I：

10.1063/1.114682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the polarization independent operation of an electroabsorption guided-wave modulator based on strained GaInAs-AlInAs multiquantum well structure. The device operates in the 1.5-1.6 μm wavelength range and exhibits very high static performances as illustrated by the measured 15 dB/100 μm extinction ratio for a drive voltage of only 1.25 V. We show that the observed polarization insensitivity of this device is in good agreement with the calculation of the electroabsorption curves. The detailed analysis indicates that significant improvement of the performance is still possible.© 1995 American Institute of Physics.

引用

页码：247 / 249

页数：3

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