ATOMIC LAYER EPITAXY OF ALAS AND (ALAS)N(GAAS)N

被引：7
|
作者：
ISHIZAKI, M [1 ]
KANO, N [1 ]
YOSHINO, J [1 ]
KUKIMOTO, H [1 ]
机构：
[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,TOKYO 152,JAPAN
来源：
THIN SOLID FILMS | 1993年 / 225卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(93)90129-D
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An overview is given of the recent achievements of self-limiting growth for AlAs by metal-organic vapor phase epitaxy using dimethylaluminumhydride and arsine as source materials, and its application in (AlAs)n (GaAs)n short-period superlattices. There is a discussion of the possible Al configurations for two monolayers of self-limiting growth, the problems of carbon incorporation in the layers and the instability of dimethylaluminumhydride.
引用
收藏
页码：74 / 77
页数：4
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