ATOMIC LAYER EPITAXY OF ALAS AND (ALAS)N(GAAS)N

被引：7

作者：

ISHIZAKI, M ^{[1
]}

KANO, N ^{[1
]}

YOSHINO, J ^{[1
]}

KUKIMOTO, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,TOKYO 152,JAPAN

来源：

THIN SOLID FILMS | 1993年 / 225卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90129-D

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An overview is given of the recent achievements of self-limiting growth for AlAs by metal-organic vapor phase epitaxy using dimethylaluminumhydride and arsine as source materials, and its application in (AlAs)n (GaAs)n short-period superlattices. There is a discussion of the possible Al configurations for two monolayers of self-limiting growth, the problems of carbon incorporation in the layers and the instability of dimethylaluminumhydride.

引用

页码：74 / 77

页数：4

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