A MECHANISM FOR RADIATION-INDUCED DEGRADATION IN GAAS FIELD-EFFECT TRANSISTORS

被引：8
|
作者：
BUOT, FA
ANDERSON, WT
CHRISTOU, A
CAMPBELL, AB
KNUDSON, AR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 02期
关键词：
D O I：
10.1063/1.334741
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：581 / 590
页数：10
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