ELECTRONIC EFFECTS ON DISLOCATION VELOCITIES IN HEAVILY DOPED SILICON

被引：120
|
作者：
PATEL, JR [1 ]
TESTARDI, LR [1 ]
FREELAND, PE [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
PHYSICAL REVIEW B | 1976年 / 13卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.13.3548
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：3548 / 3557
页数：10
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