EXCIMER-LASER-INDUCED ETCHING OF SILICON IN CHLORINE ATMOSPHERE AT A WAVELENGTH OF 248-NM

被引：5
|
作者：
JIANG, W [1 ]
BAUMGARTNER, H [1 ]
EISELE, I [1 ]
机构：
[1] UNIV MUNICH,FAK ELEKTROTECH,INST PHYS,D-85577 MUNICH,GERMANY
来源：
APPLIED SURFACE SCIENCE | 1995年 / 86卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(94)00440-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The etching behaviour of silicon in chlorine atmosphere assisted by laser radiation at 248 nm has been studied as a function of laser fluence and gas pressure. Different process regions have been determined. The crystalline quality and the surface morphology and roughness have been investigated by transmission electron microscopy and secondary ion mass spectroscopy.
引用
收藏
页码：564 / 567
页数：4
相关论文
共 50 条
  • [1] PHOTOASSOCIATION OF KRF EXCIMER AT 248-NM
    HAKUTA, K
    NAKAYAMA, K
    FUJINO, M
    TAKUMA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L1989 - L1992
  • [2] Excimer-laser-induced micropatterning of silicon dioxide on silicon substrates
    Yu, JJ
    Zhang, JY
    Boyd, IW
    Lu, YF
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 72 (01): : 35 - 39
  • [3] PROJECTION-PATTERNED ETCHING OF SILICON IN CHLORINE ATMOSPHERE WITH A KRF EXCIMER-LASER
    FOULON, F
    GREEN, M
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 61 (06): : 655 - 661
  • [4] Excimer-laser-induced micropatterning of silicon dioxide on silicon substrates
    J.J. Yu
    J.Y. Zhang
    I.W. Boyd
    Y.F. Lu
    Applied Physics A, 2001, 72 : 35 - 39
  • [5] Improvement of electrical performance of InGaZnO/HfSiO TFTs with 248-nm excimer laser annealing
    Hau-Yuan Huang
    Shui-Jinn Wang
    Chien-Hung Wu
    Chien-Yuan Lu
    Electronic Materials Letters, 2014, 10 : 899 - 902
  • [6] Improvement of Electrical Performance of InGaZnO/HfSiO TFTs with 248-nm Excimer Laser Annealing
    Huang, Han-Yuan
    Wang, Shui-Jinn
    Wu, Chien-Hung
    Lu, Chien-Yuan
    ELECTRONIC MATERIALS LETTERS, 2014, 10 (05) : 899 - 902
  • [7] ABLATION OF BENZENE FROM VANDERWAALS FILMS WITH EXCIMER LASER-PULSES AT 248-NM
    BUCK, M
    HESS, P
    APPLIED SURFACE SCIENCE, 1989, 43 : 358 - 362
  • [8] Experimental study of 248nm excimer laser etching of alumina
    Hu, Hongtao
    Shao, Jingzhen
    Wang, Xi
    Fang, Xiaodong
    ADVANCED LASER MANUFACTURING TECHNOLOGY, 2016, 10153
  • [9] LASER-INDUCED CHEMICAL ETCHING OF SILICON IN CHLORINE ATMOSPHERE.
    Mogyorosi, P.
    Kullmer, R.
    Bauerle, D.
    Applied physics. A, Solids and surfaces, 1988, A45 (04): : 293 - 299
  • [10] MODEL OF LASER-INDUCED CHEMICAL ETCHING OF SILICON IN CHLORINE ATMOSPHERE
    SYTOV, IP
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 55 (04): : 372 - 377
12345