SUBMICROMETER THIN GATE OXIDE P-CHANNEL TRANSISTORS WITH P+ POLYSILICON GATES FOR VLSI APPLICATIONS

被引：9
|
作者：
CHAM, KM
WENOCUR, DW
LIN, J
LAU, CK
FU, HS
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 01期
关键词：
D O I：
10.1109/EDL.1986.26288
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：49 / 52
页数：4
相关论文
共 50 条
  • [21] Improved ultrathin gate oxide integrity in p+-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation
    Chen, CC
    Lin, HC
    Chang, CY
    Huang, TY
    Chien, CH
    Liang, MS
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2000, 3 (06) : 290 - 292
  • [22] PERFORMANCE OF P-CHANNEL LATERAL INSULATED GATE TRANSISTORS.
    Chow, T.P.
    Pattanayak, D.N.
    Al-Mayarati, S.
    Robinson, A.L.
    Baliga, B.J.
    Adler, M.S.
    Wildi, E.J.
    IEEE Transactions on Electron Devices, 1986, ED-33 (11)
  • [23] BORON-DIFFUSION EFFECTS FROM P+ POLYSILICON GATE IN THIN THERMAL OXIDE AND PLASMA NITRIDED OXIDE
    PIOT, B
    BARLA, K
    GARCIN, B
    STRABONI, A
    MICROELECTRONIC ENGINEERING, 1991, 15 (1-4) : 475 - 478
  • [24] Boron diffusion and activation during heat treatment in heavily doped polysilicon thin films for P+ metal-oxide-semiconductor transistors gates
    Mahamdi, R
    Mansour, F
    Scheid, E
    Temple-Boyer, P
    Jalabert, L
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (12): : 6723 - 6727
  • [25] P-CHANNEL MOSFETS IN LPCVD POLYSILICON
    MALHI, SDS
    CHATTERJEE, PK
    PINIZZOTTO, RF
    LAM, HW
    CHEN, CEC
    SHICHIJO, H
    SHAH, RR
    BELLAVANCE, DW
    IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 369 - 371
  • [26] p-Channel Oxide Thin Film Transistors Using Solution-Processed Copper Oxide
    Kim, Sang Yun
    Ahn, Cheol Hyoun
    Lee, Ju Ho
    Kwon, Yong Hun
    Hwang, Sooyeon
    Lee, Jeong Yong
    Cho, Hyung Koun
    ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (07) : 2417 - 2421
  • [27] THERMAL BUDGET FOR FABRICATING P(+) POLYSILICON GATE WITH THIN GATE OXIDE
    SUZUKI, K
    SATOH, A
    AOYAMA, T
    NAMURA, I
    INOUE, F
    KATAOKA, Y
    TADA, Y
    SUGII, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (08) : 2786 - 2789
  • [28] THE ORIGINS OF THE PERFORMANCE DEGRADATION OF IMPLANTED P+ POLYSILICON GATED P-CHANNEL MOSFET WITH WITHOUT RAPID THERMAL ANNEALING
    HSIEH, JC
    FANG, YK
    CHEN, CW
    TSAI, NS
    LIN, MS
    TSENG, FC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (05) : 692 - 697
  • [29] THIN-FILM SOI CMOS TRANSISTORS WITH P+-POLYSILICON GATES
    DAVIS, JR
    ARMSTRONG, GA
    THOMAS, NJ
    DOYLE, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (01) : 32 - 38
  • [30] Hot-carrier-induced degradation in short p-channel nonhydrogenated polysilicon thin-film transistors
    Hastas, NA
    Dimitriadis, CA
    Brini, J
    Kamarinos, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (09) : 1552 - 1557
12345