LOW-RESISTANCE OHMIC CONTACTS TO PARA-TYPE GAAS USING ZN/PD/AU METALLIZATION

被引：22
|
作者：
BROOKS, RC [1 ]
CHEN, CL [1 ]
CHU, A [1 ]
MAHONEY, LJ [1 ]
MAVROIDES, JG [1 ]
MANFRA, MJ [1 ]
FINN, MC [1 ]
机构：
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
来源：
IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 10期
关键词：
D O I：
10.1109/EDL.1985.26217
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：525 / 527
页数：3
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