MBE-GROWN GAAS N-ALGAAS HETEROSTRUCTURES AND THEIR APPLICATION TO HIGH ELECTRON-MOBILITY TRANSISTORS

被引：10
|
作者：
HIYAMIZU, S
MIMURA, T
ISHIKAWA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1982年 / 21卷 / 01期
关键词：
D O I：
10.7567/JJAPS.21S1.161
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：161 / 168
页数：8
相关论文
共 50 条
  • [41] AlGaAs/GaAs and AlGaAs/InGaAs/GaAs high electron mobility transistors grown by metalorganic vapor phase epitaxy using tertiarybutylarsine
    Kikkawa, Toshihide, 1600, (30):
  • [42] ELECTRON OVERFLOW AND INTERFACE STATE EFFECT IN MBE-GROWN ALGAAS/GAAS MISS-FETS
    SAKAKI, H
    HOTTA, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 175 - 175
  • [43] Critical thickness investigation of MBE-grown GaInAs/GaAs and GaAsSb/GaAs heterostructures
    Maros, Aymeric
    Faleev, Nikolai
    King, Richard R.
    Honsberg, Christiana B.
    Convey, Diana
    Xie, Hongen
    Ponce, Fernando A.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (02):
  • [44] ALGAAS/GAAS DOUBLE-HETEROJUNCTION HIGH ELECTRON-MOBILITY TRANSISTORS GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY
    HUANG, RT
    TU, YY
    KASEMSET, D
    NOURI, N
    COLVARD, C
    ACKLEY, D
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) : 550 - 552
  • [45] THERMALLY STIMULATED PERSISTENT CONDUCTIVITY IN N-ALGAAS GAAS HETEROSTRUCTURES
    LEYBOVICH, IS
    RODE, DL
    DAVIS, GA
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) : 939 - 941
  • [46] Integrated high electron mobility transistors in GaAs/AlGaAs heterostructures for amplification at sub-Kelvin temperatures
    Tracy, L. A.
    Reno, J. L.
    Fallahi, S.
    Manfra, M. J.
    APPLIED PHYSICS LETTERS, 2019, 114 (05)
  • [47] Electric field effects on electron mobility in n-AlGaAs/GaAs/AlGaAs single asymmetric quantum wells
    Lima, FMS
    Fonseca, ALA
    Nunes, OAC
    Fanyao, Q
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) : 5296 - 5303
  • [48] MBE GROWTH OF SELECTIVELY DOPED GaAs/N-AlGaAs HETEROSTRUCTURE.
    Chen Zonggui
    Liang Jiben
    Sun Dianzhau
    Huang Yunheng
    Kong Meiying
    1600, (05):
  • [49] GaAs/AlGaAs nanoheterostructures: simulation and application on high mobility transistors
    Martin Rodriguez, Eduardo
    Gonzalez R, Estrella
    INGENIERIA E INVESTIGACION, 2011, 31 (01): : 144 - 153
  • [50] THE EFFECT OF GROWTH TEMPERATURE ON THE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
    HIYAMIZU, S
    FUJII, T
    MIMURA, T
    NANBU, K
    SAITO, J
    HASHIMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : L455 - L458
12345