EFFECTS OF SOME ADDITIVES ON THERMOELECTRIC PROPERTIES OF FESI2 THIN-FILMS

被引：74
|
作者：
KOMABAYASHI, M [1 ]
HIJIKATA, K [1 ]
IDO, S [1 ]
机构：
[1] SAITAMA UNIV,FAC ENGN,DEPT ELECT ENGN,URAWA,SAITAMA 338,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 02期
关键词：
FESI2 THIN FILM; THERMOELECTRIC PROPERTY; RF-SPUTTERING; EFFECTS OF ADDITIVES; ACTIVATION ENERGY;
D O I：
10.1143/JJAP.30.331
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Effects of some additives (V, Cr, Mn, Co, Ni, Pd, Pt) on thermoelectric properties of FeSi2 thin films were studied. V, Cr or Mn-doped FeSi2 films were of p-type semiconductor and Co, Ni, Pd and Pt-doped FeSi2 films of n-type semiconductor. It was indicated that V or Cr are more suitable additives in thermoelectric properties of p-type FeSi2 than Mn and that Pt is superior to other additives in thermoelectric properties of n-type FeSi2.
引用
收藏
页码：331 / 334
页数：4
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