NOVEL SUBMICROMETER MOS DEVICES BY SELF-ALIGNED NITRIDATION OF SILICIDE

被引：25
|
作者：
KANEKO, H
KOYANAGI, M
SHIMIZU, S
KUBOTA, Y
KISHINO, S
机构：
[1] HITACHI MICRO COMP ENGN LTD,KODAIRA,TOKYO 187,JAPAN
[2] HITACHI LTD,MUSASHI WORKS,KODAIRA,TOKYO 187,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 11期
关键词：
D O I：
10.1109/T-ED.1986.22731
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1702 / 1709
页数：8
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