CE3BI4PT3 AND HYBRIDIZATION GAP PHYSICS

被引：35
|
作者：
FISK, Z
CANFIELD, PC
THOMPSON, JD
HUNDLEY, MF
机构：
[1] Los Alamos National Laboratory, Los Alamos
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 1992年 / 181卷
关键词：
D O I：
10.1016/0925-8388(92)90333-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Basic thermodynamic and transport properties of Ce3Bi4Pt3 are reviewed. Although the susceptibility displays a canonical mixed valence temperature dependence, the electrical resistance, thermoelectric power and specific heat are those associated with a small gap semiconductor in which the gap is due to hybridization of the renormalized f and conduction electrons. In addition to this, a surprising correlation between the magnetic susceptibility and the thermal expansion as well as a simple theoretical framework within which hybridization-gapped systems can be viewed are presented.
引用
收藏
页码：369 / 375
页数：7
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