共 34 条
- [32] Plasma-radiation-induced interface states in metal-nitride-oxide-silicon structure of charge-coupled device image sensor and their reduction using pulse-time-modulated plasma JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4B): : 2444 - 2448
- [33] Reduction of ultraviolet-radiation damage in SiO2 using pulse-time-modulated plasma and its application to charge-coupled 44 image-sensor processes (vol 21, pg 2448, 2003) JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (02): : 861 - 861
- [34] Next-generation Fundus Camera with Full Color Image Acquisition in 0-lx Visible Light by 1.12-micron Square Pixel, 4K, 30-fps BSI CMOS Image Sensor with Advanced NIR Multi-spectral Imaging System 2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2018, : 163 - 164