A MONOLITHICALLY INTEGRATED FREQUENCY MIXING PHOTORECEIVER

被引：1
|
作者：
CHUNG, YK [1 ]
FORREST, SR [1 ]
机构：
[1] PRINCETON UNIV,DEPT ELECTR ENGN,ADV TECHNOL CTR PHOTON & OPTOELECTR,PRINCETON,NJ 08544
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 06期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/68.219710
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have demonstrated a monolithically integrated photoreceiver/mixer for long wavelength optical communication and switching. The circuit makes use of a narrow gate junction field effect transistor as a voltage tunable feedback resistor to achieve high-efficiency low-distortion mixing. An overall optoelectronic conversion gain of 20 dB and a second-order frequency product of -26 dBc have been measured.
引用
收藏
页码：682 / 686
页数：5
相关论文
共 50 条
  • [31] 40 Gbit/s 1.55 μm pin-HEMT photoreceiver monolithically integrated on 3in GaAs substrate
    Hurm, V
    Benz, W
    Bronner, W
    Hulsmann, A
    Jakobus, T
    Kohler, K
    Leven, A
    Ludwig, M
    Raynor, B
    Rosenzweig, J
    Schlechtweg, M
    Thiede, A
    ELECTRONICS LETTERS, 1998, 34 (21) : 2060 - 2062
  • [32] Monolithically integrated 16-channel 1.55 mu m pin/HBT photoreceiver array with 11.5 GHz bandwidth
    Syao, KC
    Yang, K
    Zhang, X
    Haddad, GI
    Bhattacharya, P
    ELECTRONICS LETTERS, 1997, 33 (01) : 82 - 83
  • [33] Design and Test of Monolithically Integrated 430 GHz Frequency Tripler
    Yang Dabao
    Xing Dong
    Liang Shixiong
    Zhang Lisen
    Xu Peng
    Feng Zhihong
    CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG, 2019, 46 (06):
  • [34] Frequency beating between monolithically integrated semiconductor ring lasers
    Cao, HJ
    Liu, CY
    Ling, H
    Deng, H
    Benavidez, M
    Smagley, VA
    Caldwell, RB
    Peake, GM
    Smolyakov, GA
    Eliseev, PG
    Osinski, M
    APPLIED PHYSICS LETTERS, 2005, 86 (04) : 041101 - 1
  • [35] Monolithically integrated MSM-PD/HEMT photoreceiver prepared on identical InP/InGaAs 2DEG heterostructure
    Kordos, P
    Horstmann, M
    Marso, M
    Schimpf, K
    1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 42 - 45
  • [36] 40Gbit/s 1.55μm pin-HEMT photoreceiver monolithically integrated on 3 in GaAs substrate
    Fraunhofer-Inst. F. Angew. F., Tullastrasse 72, D-79108 Freiburg, Germany
    Electron Lett, 21 (2060-2062):
  • [37] High-speed monolithically integrated MSM-FET photoreceiver based on GaAs/InGaAs strained layer superlattice
    Debbar, N
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1997, 83 (03) : 325 - 332
  • [38] HIGH-SPEED, MONOLITHICALLY INTEGRATED PIN-HEMT PHOTORECEIVER FABRICATED ON INP WITH 18GHZ BANDWIDTH
    KLEPSER, BUH
    SPICHER, J
    BECK, M
    BERGAMASCHI, C
    PATRICK, W
    BACHTOLD, W
    ELECTRONICS LETTERS, 1995, 31 (21) : 1831 - 1833
  • [39] Design and Test of Monolithically Integrated 430 GHz Frequency Tripler
    Yang D.
    Xing D.
    Liang S.
    Zhang L.
    Xu P.
    Feng Z.
    Zhongguo Jiguang/Chinese Journal of Lasers, 2019, 46 (06):
  • [40] An InP Monolithically Integrated Multi-Frequency Wavelength Converter
    Bontempi, F.
    Andriolli, N.
    Faralli, S.
    Klamkin, J.
    Kleijn, E.
    de Vries, T.
    Contestabile, G.
    2014 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC), 2014,
12345