GLIDE OF PARTIAL DISLOCATIONS IN SILICON

被引:4
|
作者
HEGGIE, M
JONES, R
机构
来源
JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC1期
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D O I
10.1051/jphyscol:1982107
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页码:45 / 50
页数:6
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