GLIDE OF PARTIAL DISLOCATIONS IN SILICON

被引：4
|
作者：
HEGGIE, M
JONES, R
机构：
来源：
JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC1期
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D O I：
10.1051/jphyscol:1982107
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学科分类号：
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页码：45 / 50
页数：6
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