NORMALLY-OFF INGAAS JUNCTION FIELD-EFFECT TRANSISTOR WITH INGAAS BUFFER LAYER

被引：7
|
作者：
ALBRECHT, H
LAUTERBACH, C
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 08期
关键词：
D O I：
10.1109/EDL.1987.26657
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：353 / 354
页数：2
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