NORMALLY-OFF InGaAs JUNCTION FIELD-EFFECT TRANSISTOR WITH InGaAs BUFFER LAYER.

被引：0
|
作者：
Albrecht, H. [1 ]
Lauterbach, Ch [1 ]
机构：
[1] Siemens Research Lab, Munich, West Ger, Siemens Research Lab, Munich, West Ger
来源：
Electron device letters | 1987年 / EDL-8卷 / 08期
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摘要：
TRANSISTORS, FIELD EFFECT
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页码：353 / 354
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