FIELD DEPENDABILITY OF A HEIGHT OF THE SCHOTTKY-BARRIER IN SILLENITE CRYSTALS

被引:0
|
作者
GRACHEV, AI
机构
来源
ZHURNAL TEKHNICHESKOI FIZIKI | 1989年 / 59卷 / 11期
关键词
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:183 / 185
页数:3
相关论文
共 50 条
  • [1] OPTIMUM BARRIER HEIGHT FOR SCHOTTKY-BARRIER DETECTORS
    SHOUSHA, AHM
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1982, 15 (04) : 669 - 675
  • [2] SCHOTTKY-BARRIER DEVICES WITH LOW BARRIER HEIGHT
    KAJIYAMA, K
    SAKATA, S
    MIZUSHIM.Y
    PROCEEDINGS OF THE IEEE, 1974, 62 (09) : 1287 - 1288
  • [3] SCHOTTKY-BARRIER DEVICES WITH LOW BARRIER HEIGHT
    MACPHERSON, AC
    DAY, HM
    PROCEEDINGS OF THE IEEE, 1975, 63 (06) : 980 - 980
  • [4] SCHOTTKY-BARRIER HEIGHT OF IRIDIUM SILICIDE
    OHDOMARI, I
    TU, KN
    DHEURLE, FM
    KUAN, TS
    PETERSSON, S
    APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1028 - 1030
  • [5] SCHOTTKY-BARRIER HEIGHT OF PHOSPHIDIZED INGAAS
    SUGINO, T
    SAKAMOTO, Y
    SHIRAFUJI, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (2B): : L239 - L242
  • [6] SCHOTTKY-BARRIER DEVICES WITH LOW BARRIER HEIGHT - REPLY
    KAJIYAMA, K
    SAKATA, S
    MIZUSHIMA, Y
    PROCEEDINGS OF THE IEEE, 1975, 63 (06) : 90 - 91
  • [7] BARRIER HEIGHT CHANGE IN MIS SCHOTTKY-BARRIER DIODES
    SINGH, JP
    SOLID-STATE ELECTRONICS, 1982, 25 (01) : 79 - 80
  • [8] BARRIER HEIGHT OF TITANIUM SILICIDE SCHOTTKY-BARRIER DIODES
    KIKUCHI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11): : L894 - L895
  • [9] NEW METHOD FOR CONTROL OF SCHOTTKY-BARRIER HEIGHT
    BRUCKER, CF
    BRILLSON, LJ
    APPLIED PHYSICS LETTERS, 1981, 39 (01) : 67 - 69
  • [10] AU/INSE SCHOTTKY-BARRIER HEIGHT DETERMINATION
    MAMY, R
    ZAOUI, X
    BARRAU, J
    CHEVY, A
    REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (09): : 947 - 950