SECONDARY ION MASS-SPECTROSCOPY DETERMINATION OF OXYGEN DIFFUSION-COEFFICIENT IN HEAVILY SB DOPED SI

被引：10
|
作者：
PAGANI, M
机构：
[1] MEMC Electronics Materials Spa
来源：
JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 07期
关键词：
D O I：
10.1063/1.346311
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The diffusion coefficient of oxygen in heavily antimony doped Czochralski Si was measured in the temperature range 950-1100 °C by using secondary ion mass spectroscopy (SIMS). The diffusion coefficient, obtained from SIMS oxygen concentration profiles in samples submitted to out diffusion, shows no dependence on antimony concentration. The combined data give an activation energy of 2.68 eV, which is in good agreement with published results.
引用
收藏
页码：3726 / 3728
页数：3
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