INTERNAL FIELD-EMISSION OF MICROELECTRONIC MIS STRUCTURES

High field effects in special (ultraviolet (UV) treated, with graded-band-gap insulating layer multitips) MIS structures are considered. These structures have low interface barriers or high internal contact electric fields. A superposition of internal and additional external fields leads to a release of mobile ions, in in particular protons. The dependence of the emission current on properties of MIS structures and field strength are studied. The Poole-Frenkel mechanism is found to be responsible for the ionic component of the emission current. The parameters of this process have been determined. A new method for studying the kinetic characteristics of the internal electron emission taking into account carrier trapping processes has been developed. This technique makes it possible to determine the carrier effective masses as well as the interface barrier heights in MIS structures containing graded band-gap SiO(x)N(y) or other complex layers. The last part of the report is dedicated to field photoemission in MIS structures with emitter arrays containing tunnel-thin insulator films and a Schottky barrier. Along with Fowler-Nordheim photoemission, an anomalous photocurrent of the opposite polarity (infrared photocurrent) has been observed.