DETERMINING THE REFRACTIVE-INDEX AND AVERAGE THICKNESS OF ASSE SEMICONDUCTING GLASS-FILMS FROM WAVELENGTH MEASUREMENTS ONLY

被引:18
|
作者
CORRALES, C
RAMIREZMALO, JB
FERNANDEZPENA, J
VILLARES, P
SWANEPOEL, R
MARQUEZ, E
机构
[1] UNIV CADIZ,FAC CIENCIAS,DEPT FIS MAT CONDENSADA,CADIZ,SPAIN
[2] RAND AFRIKAANS UNIV,DEPT PHYS,JOHANNESBURG 2000,SOUTH AFRICA
来源
APPLIED OPTICS | 1995年 / 34卷 / 34期
关键词
D O I
10.1364/AO.34.007907
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The dispersive refractive index n(Lambda) and thickness d of chalcogenide glass thin films are usually calculated from measurements of both optical transmission and wavelength values. Many factors can influence the transmission values, leading to large errors in the values obtained for n(Lambda) and d. A novel optical method is used to derive n(Lambda) and d for AsSe semiconducting glass thin films deposited by thermal evaporation in the spectral region where k(2) much less than n(2), using only wavelength values. This entails obtaining two transmission spectra: one at normal incidence and another at oblique incidence. The procedure yields values for the refractive index and average thickness of thermally evaporated chalcogenide films to an accuracy better than 3%. (C) 1995 Optical Society of America
引用
收藏
页码:7907 / 7913
页数:7
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