INVESTIGATION OF HF ETCHED HYDROGENATED AMORPHOUS-SILICON SURFACES BY X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：5
|
作者：
ANANDAN, C
WILLIAMS, RH
机构：
[1] Viriamu Jones Laboratory, Department of Physics, University of Wales College of Cardiff
[2] National Physical Laboratory, New Delhi
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 03期
关键词：
D O I：
10.1088/0268-1242/5/3/014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Clean hydrogen-terminated amorphous silicon surfaces have been generated by etching in various solutions based on hydrofluoric acid. The cleaned surfaces were characterised by X-ray photoelectron spectroscopy which showed the residual carbon and oxygen contaminations to be extremely low. It was also observed that the use of ethanol-based solutions led to an improved surface. Finally, it is shown that the contamination levels depend critically on the purity of the starting chemicals.
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页码：265 / 268
页数：4
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