DOSE-RATE UPSET PATTERNS IN A 16K CMOS SRAM

被引：22
|
作者：
MASSENGILL, LW [1 ]
DIEHL, SE [1 ]
BROWNING, JS [1 ]
机构：
[1] SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期
关键词：
D O I：
10.1109/TNS.1986.4334638
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1541 / 1545
页数：5
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