TRANSITION FROM WEAK TO STRONG SPIN-ORBIT SCATTERING REGIME IN DIFFUSIVE INGAAS/INALAS QUANTUM WIRES

被引：4
|
作者：
FUKAI, YK [1 ]
NAKANO, H [1 ]
NAKATA, S [1 ]
TARUCHA, S [1 ]
ARAI, K [1 ]
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, BASIC RES LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源：
SOLID STATE COMMUNICATIONS | 1995年 / 94卷 / 09期
关键词：
HETEROJUNCTIONS; NANOSTRUCTURES; QUANTUM LOCALIZATION; SPIN-ORBIT EFFECTS;
D O I：
10.1016/0038-1098(95)00103-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Spin-orbit interaction in InGaAs/InAlAs quantum wires is investigated by measuring conductance fluctuations at temperatures ranging from 2 K down to 0.06 K. The resistance of an InGaAs/InAlAs wire in a zero magnetic field decreases as the temperature decreases below 1.6 K. This temperature dependence is reproduced by the theory of antilocalization in the strong spin-orbit interaction regime. In the same temperature range, the conductance fluctuation amplitude increases nonmonotonically with decreasing temperature. This behavior is attributed to the temperature-induced transition from the weak to the strong spin-orbit scattering regime in the mesoscopic disordered system.
引用
收藏
页码：757 / 761
页数：5
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