X-ray excited luminescence of ytterbium containing YAG single crystalline films

被引：0
|
作者：
Zakharko, Ya. M. [1 ]
Luchechko, A. P. [1 ]
Syvorotka, I. M. [2 ]
Syvorotka, I. I. [2 ]
Ubizskii, S. B. [3 ]
机构：
[1] I Franko Lviv Polytech Natl Univ, Fac Elect, 107 Tarnayskogo St, UA-79017 Lvov, Ukraine
[2] SRC Carat, Inst Mat, UA-79031 Lvov, Ukraine
[3] Natl Univ Lvivska Politech, Inst Telecommun Radioelect & Elect Engn, UA-79013 Lvov, Ukraine
来源：
FUNCTIONAL MATERIALS | 2005年 / 12卷 / 02期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Luminescence properties of ytterbium ions in of Y3Al5O12 (YAG) epitaxial films have been investigated. The influence of growth conditions on the change of activator ions charge state and the luminescence in visible spectral region has been demonstrated. It has been established that emission bands with maxima at 480 and 580 nm are attributed to the 5d-4f transitions of Yb2+ ions. The emission bands with maxima at 330 nm and 500 nm correspond to transitions from charge transfer state to F-2(7/2) and F-2(5/2) state of Yb3+ ions, respectively.
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页码：274 / 277
页数：4
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