PHONON CONFINEMENT IN INAS/GASB SUPERLATTICES

被引:12
|
作者
BERDEKAS, D
KANELLIS, G
机构
[1] Department of Physics, University of Thessaloniki
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 12期
关键词
D O I
10.1103/PhysRevB.43.9976
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Shell-model calculations of the zone-center phonons of InAs/GaSb superlattices reveal that their confinement characteristics depend on the direction of the atomic displacements and the relative orientation of the interface bonds. Similar behavior is found for certain modes even in the frequency range of bulk acoustic phonons. These findings are attributed to different elastic coupling between the two constituent layers. Interface modes localized at the two different interfaces Ga-As and In-Sb are discussed.
引用
下载
收藏
页码:9976 / 9979
页数:4
相关论文
共 50 条
  • [41] GaSb bulk materials and InAs/GaSb superlattices grown by MBE on GaAs substrates
    State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China
    Pan Tao Ti Hsueh Pao, 2007, 7 (1088-1091):
  • [42] Design Effects on the Material Properties of InAs/GaSb Superlattices
    Haugan, H. J.
    Brown, G. J.
    Szmulowicz, F.
    Elhamri, S.
    15TH INTERNATIONAL CONFERENCE ON NARROW GAP SYSTEMS (NGS15), 2011, 1416 : 155 - 157
  • [43] Epitaxial films of GeSi, AlGaN, and GaSb and GaSb/InAs superlattices on substrates of fianite
    Yu. N. Buzynin
    M. N. Drozdov
    A. N. Buzynin
    V. V. Osiko
    B. N. Zvonkov
    Yu. N. Drozdov
    O. I. Khrykin
    A. E. Luk’yanov
    F. A. Luk’yanov
    V. G. Shengurov
    S. A. Denisov
    Bulletin of the Russian Academy of Sciences: Physics, 2011, 75 (9) : 1221 - 1226
  • [44] Phonon Transport in GaAs and InAs Twinning Superlattices
    Lopez-Guell, Kim
    Forrer, Nicolas
    Cartoixa, Xavier
    Zardo, Ilaria
    Rurali, Riccardo
    JOURNAL OF PHYSICAL CHEMISTRY C, 2022, 126 (39): : 16851 - 16858
  • [45] Interband phonon assisted tunneling in InAs/GaSb heterostructures
    Kisin, MV
    Stroscio, MA
    Belenky, G
    Luryi, S
    PHYSICA B-CONDENSED MATTER, 2002, 316 : 223 - 225
  • [46] Raman and photoluminescence spectra on type II InAs/GaSb superlattices
    Guo, Jie
    Sun, Wei-Guo
    Peng, Zhen-Yu
    Zhou, Zhi-Qiang
    Xu, Ying-Qiang
    Niu, Zhi-Chuan
    Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2009, 38 (02): : 278 - 281
  • [47] Exploring the optimum growth conditions for InAs/GaSb and GaAs/GaSb superlattices on InAs substrates by metalorganic chemical vapor deposition
    Li, Xin
    Zhao, Yu
    Wu, Qihua
    Teng, Yan
    Hao, Xiujun
    Huang, Yong
    JOURNAL OF CRYSTAL GROWTH, 2018, 502 : 71 - 75
  • [48] In-plane magnetic field studies of InAs/GaSb superlattices
    Rundell, AR
    Srivastava, GP
    Inkson, JC
    PHYSICAL REVIEW B, 1997, 55 (08): : 5177 - 5183
  • [49] Vertical transport in InAs/GaSb type-II superlattices
    Umana-Membreno, G. A.
    Klein, B.
    Kala, H.
    Antoszewski, J.
    Gautam, G.
    Kutty, M. N.
    Plis, E.
    Krishna, S.
    Faraone, L.
    2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012), 2012, : 5 - +
  • [50] CALCULATED LONGITUDINAL SUPERLATTICE AND INTERFACE PHONONS OF INAS/GASB SUPERLATTICES
    FASOLINO, A
    MOLINARI, E
    MAAN, JC
    SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (02) : 117 - 120