HIGH-GAIN GAAS-GA1-XALXAS HETEROJUNCTION PHOTO-TRANSISTORS

被引：0
|
作者：
BENEKING, H [1 ]
MISCHEL, P [1 ]
SCHUL, G [1 ]
机构：
[1] TECH UNIV AACHEN,INST SEMICOND ELECTR,D-5100 AACHEN,FED REP GER
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 11期
关键词：
D O I：
10.1109/T-ED.1976.18640
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1263 / 1264
页数：2
相关论文
共 50 条
  • [31] HIGH-GAIN GAAIAS/GAAS HETEROJUNCTION PHOTOTRANSISTORS
    HUANG, XK
    SUN, BY
    SUN, CC
    XUE, BX
    ZHANG, PR
    CHINESE PHYSICS-ENGLISH TR, 1987, 7 (03): : 824 - 827
  • [32] EXPERIMENTAL RESULTS ON THE HIGH-FIELD THERMOPOWER OF A TWO-DIMENSIONAL ELECTRON-GAS IN A GAAS-GA1-XALXAS HETEROJUNCTION
    FLETCHER, R
    MAAN, JC
    WEIMANN, G
    PHYSICAL REVIEW B, 1985, 32 (12): : 8477 - 8479
  • [33] ANOMALIES IN THE CYCLOTRON-RESONANCE IN HIGH-MOBILITY GAAS-GA1-XALXAS HETEROJUNCTIONS
    NICHOLAS, RJ
    HOPKINS, MA
    BARNES, DJ
    BRUMMELL, MA
    SIGG, H
    HEITMANN, D
    ENSSLIN, K
    HARRIS, JJ
    FOXON, CT
    WEIMANN, G
    PHYSICAL REVIEW B, 1989, 39 (15): : 10955 - 10962
  • [34] Impact of Surface Recombination on the Responsivity of GaAs- and InP- based Heterojunction Photo-Transistors
    Khan, Hassan A.
    Rezazadeh, Ali A.
    2011 6TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE, 2011, : 49 - 52
  • [35] IMPURITY STATES IN A QUANTUM-WELL WIRE OF GAAS-GA1-XALXAS
    DASILVA, AF
    PHYSICAL REVIEW B, 1990, 41 (03): : 1684 - 1686
  • [36] CONFINED ELECTRON-STATES IN GAAS-GA1-XALXAS QUANTUM WIRES
    WONG, KB
    JAROS, M
    HAGON, JP
    PHYSICAL REVIEW B, 1987, 35 (05): : 2463 - 2466
  • [37] ACCURATE THEORY OF EXCITONS IN GAAS-GA1-XALXAS QUANTUM-WELLS
    ANDREANI, LC
    PASQUARELLO, A
    PHYSICAL REVIEW B, 1990, 42 (14): : 8928 - 8938
  • [38] DONORS AND EXCITONS IN TRIANGULAR GAAS-GA1-XALXAS QUANTUM-WELLS
    JIANG, GZ
    WEN, CZ
    PHYSICAL REVIEW B, 1994, 50 (04): : 2689 - 2692
  • [39] CALCULATION OF BOUND EXCITONS IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES
    HAUFE, A
    SOLID STATE COMMUNICATIONS, 1988, 67 (09) : 899 - 901
  • [40] THE EXCITON PHONON SYSTEM IN GAAS-GA1-XALXAS QUANTUM-WELLS
    DEGANI, MH
    HIPOLITO, O
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (09) : 578 - 581
12345